ds30250 rev. 5 - 2 1 of 3 bc846aw - bc848cw www.diodes.com diodes incorporated bc846aw - bc848cw npn surface mount small signal transistor features maximum ratings @ t a = 25c unless otherwise specified characteristic symbol value unit collector-base voltage bc846 bc847 bc848 v cbo 80 50 30 v collector-emitter voltage bc846 bc847 bc848 v ceo 65 45 30 v emitter-base voltage bc846, bc847 bc848 v ebo 6.0 5.0 v collector current i c 100 ma peak collector current i cm 200 ma peak emitter current i em 200 ma power dissipation (note 1) p d 200 mw thermal resistance, junction to ambient (note 1) r ja 625 c/w operating and storage temperature range t j ,t stg -65 to +150 c ideally suited for automatic insertion complementary pnp types available (bc856w-bc858w) for switching and af amplifier applications also available in lead free version marking code (note 2) type marking type marking bc846aw k1q bc847cw k1m bc846bw k1r bc848aw k1j, k1e, k1q bc847aw k1e, k1q bc848bw k1k, k1f, k1r bc847bw k1f, k1r bc848cw k1l, k1m case: sot-323, molded plastic case material - ul flammability rating classification 94v-0 moisture sensitivity: level 1 per j-std-020a terminals: solderable per mil-std-202, method 208 also available in lead free plating (matte tin finish). please see ordering information, note 5, on page 2 pin connections: see diagram marking codes (see table below & diagram on page 2) ordering & date code information: see page 2 approx. weight: 0.006 grams mechanical data a m j l f d b c h k g b e c notes: 1. device mounted on fr-4 pcb, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on diodes inc. suggested pad layout document ap02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. current gain subgroup c is not available for bc846w. sot-323 dim min max a 0.25 0.40 b 1.15 1.35 c 2.00 2.20 d 0.65 nominal e 0.30 0.40 g 1.20 1.40 h 1.80 2.20 j 0.0 0.10 k 0.90 1.00 l 0.25 0.40 m 0.10 0.18 0 8 all dimensions in mm
ds30250 rev. 5 - 2 2 of 3 bc846aw - bc848cw www.diodes.com electrical characteristics @ t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition collector-base breakdown voltage (note 3) bc846 bc847 bc848 v (br)cbo 80 50 30 v i c = 10 a, i b = 0 collector-emitter breakdown voltage (note 3) bc846 bc847 bc848 v (br)ceo 65 45 30 v i c = 10ma, i b = 0 emitter-base breakdown voltage bc846, bc847 (note 3) bc848 v (br)ebo 6 5 v i e = 1 a, i c = 0 dc current gain current gain group a b (note 3) c h fe 110 200 420 180 290 520 220 450 800 v ce = 5.0v, i c = 2.0ma collector-emitter saturation voltage (note 3) v ce(sat) 90 200 250 600 mv i c = 10ma, i b = 0.5ma i c = 100ma, i b = 5.0ma base-emitter saturation voltage (note 3) v be(sat) 700 900 mv i c = 10ma, i b = 0.5ma i c = 100ma, i b = 5.0ma base-emitter voltage (note 3) v be(on) 580 660 700 770 mv v ce = 5.0v, i c = 2.0ma v ce = 5.0v, i c = 10ma collector-cutoff current (note 3) i cbo i cbo 15 5.0 na a v cb = 30v v cb = 30v, t a = 150c gain bandwidth product f t 100 300 mhz v ce = 5.0v, i c = 10ma, f = 100mhz collector-base capacitance c cbo 3.0 4.5 pf v cb = 10v, f = 1.0mhz noise figure nf 10 db v ce = 5v, i c = 200a, r s = 2.0k f = 1.0khz, f = 200hz xxx = product type marking code (see page 1), e.g. k1q = bc846aw ym = date code marking y = year ex: n = 2002 m = month ex: 9 = september xxx ym marking information notes: 3. short duration pulse test to minimize self-heating effect. 4. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. *xx = device type, e.g. bc846aw-7. 5. for lead free version (with lead free terminal finish) part number, please add "-f" suffix to part number ab ove. example: bc846aw-7-f. device packaging shipping bc84xxw-7* sot-323 3000/tape & reel ordering information (note 4) month jan feb march apr may jun jul aug sep oct nov dec code 1234567 89 o nd year 1998 1999 2000 2001 2002 2003 2004 code jklm n pr date code key
ds30250 rev. 5 - 2 3 of 3 bc846aw - bc848cw www.diodes.com 0 50 100 25 50 75 100 125 150 175 200 p , power dissipation (mw) d t , ambient temperature (c) a fig. 1, max power dissipation vs ambient tem p erature 150 200 250 300 0 1 0.1 10 100 1000 v , collector to emitter ce(sat) saturation voltage (v) i , collector current (ma) c fig. 2 collector emitter saturation voltage vs. collector current t=25c a t = -50c a t = 150c a 0 0.1 0.2 0.3 0 .4 i c i b =20 1 100 10 1000 1 10 100 f , gain bandwidth product (mhz) t i , collector current (ma) c fi g . 4, gain bandwidth product vs collector current v= 5v ce 1 10 100 1000 1 10 100 1000 h , dc current gain fe i , collector current (ma) c fi g . 3, dc current gain vs. collector current t = 25c a t = -50c a t = 150c a
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